Hybrid graphene-PbS quantum dot devices are fabricated on an n-type silicon substrate capped with a thin SiO2 layer and are characterized by photoelectrical measurements. It is shown that the resistance of the graphene channel in the devices exhibits detectable changes when a laser beam is switche ... [Appl. Phys. Lett. 103, 143119 (2013)] published Thu Oct 03, 2013.
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