Ultraviolet Raman spectra of single uncoated and SiO2-coated silicon-on-insulator nanowires: Phonon boundary scattering, wave-vector relaxation and stress

Vladimir Poborchii, Tetsuya Tada, and Yukinori Morita et al.

We study Raman spectra of single straight Si-on-insulator (SOI) nanowires (NWs) at the 364 nm excitation wavelength. Uncoated SOI NW Raman band downshift and asymmetric broadening appeared to be smaller than those reported for NW ensembles, where these effects are enhanced due to additional wave-v ... [Appl. Phys. Lett. 103, 153104 (2013)] published Thu Oct 10, 2013.



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