Nanoscale , 2015, Advance Article
DOI: 10.1039/C4NR07496C, Paper
DOI: 10.1039/C4NR07496C, Paper
Liang Zhang, Cheng Lu, Kiet Tieu, Xing Zhao, Linqing Pei
The dissociated stacking fault from the grain boundary plane can increase ductility while retaining the high strength of the Cu bicrystal model under shear deformation.
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The dissociated stacking fault from the grain boundary plane can increase ductility while retaining the high strength of the Cu bicrystal model under shear deformation.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
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