Thursday, June 25, 2015

Resistive switching in metallic Ag2S memristors due to a local overheating induced phase transition

Nanoscale, 2015, 7,11248-11254
DOI: 10.1039/C5NR02536B, Communication
Agnes Gubicza, Miklos Csontos, Andras Halbritter, Gyorgy Mihaly
Resistive switching in Ag2S nanojunctions is quantitatively understood by considering the local overheating of the junction volume at finite bias.
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