Monday, January 18, 2016

Gate Tunable WSe2-BP van der Waals Heterojunction Devices

Nanoscale, 2016, Accepted Manuscript
DOI: 10.1039/C5NR09218C, Communication
Peng Chen, Tingting Zhang, Jing Zhang, Jianyong Xiang, Hua Yu, Shuang Wu, Xiaobo Lu, Guole Wang, Fusheng Wen, Zhongyuan Liu, Rong Yang, Dongxia Shi, Guangyu Zhang
Due to the weak screening effect, the concentration and type of charge carriers in 2D semiconductor heterostructures can be effectively tuned by electrostatic gating, enabling us to realize different type...
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