Tuesday, January 19, 2016

The intrinsic origin of hysteresis in MoS2 field effect transistors

Nanoscale, 2016, Advance Article
DOI: 10.1039/C5NR07336G, Paper
Jiapei Shu, Gongtao Wu, Yao Guo, Bo Liu, Xianlong Wei, Qing Chen
Experiments revealed that MoS2 also contributes to the hysteresis in the transfer curve of FETs.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry


from RSC - Nanoscale latest articles http://ift.tt/1PeODuz
via IFTTT

No comments:

Post a Comment