Huaizhou Zhao, Mani Pokharel, Shuo Chen, Bolin Liao, Kevin Lukas, Cyril Opeil, Gang Chen and Zhifeng Ren
We present the figure-of-merit ( ZT ) improvement in nanostructured FeSb 2− x Ag x with Ag 1− y Sb y nanoinclusions through a metal/semiconductor interface engineering approach. Owing to the interfaces between FeSb 2− x Ag x and Ag 1− y Sb y phases, as well as the identical work functions, both thermal conductivity and electrical resistivity of the nanocomposites were significantly reduced in the lower temperature regime compared with pure FeSb 2 . Overall, an improvement of 70% in ZT was achieved for the optimized nanocomposite FeSb 1.975 Ag 0.025 /Ag 0.77 Sb 0.23 sample, in which Ag 0.77 Sb 0.23 is about 10% by molar ratio. The results of this approach clearly demonstrated the metal/semiconductor interface concept and confirmed the potential of strongly correlated material sy...
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We present the figure-of-merit ( ZT ) improvement in nanostructured FeSb 2− x Ag x with Ag 1− y Sb y nanoinclusions through a metal/semiconductor interface engineering approach. Owing to the interfaces between FeSb 2− x Ag x and Ag 1− y Sb y phases, as well as the identical work functions, both thermal conductivity and electrical resistivity of the nanocomposites were significantly reduced in the lower temperature regime compared with pure FeSb 2 . Overall, an improvement of 70% in ZT was achieved for the optimized nanocomposite FeSb 1.975 Ag 0.025 /Ag 0.77 Sb 0.23 sample, in which Ag 0.77 Sb 0.23 is about 10% by molar ratio. The results of this approach clearly demonstrated the metal/semiconductor interface concept and confirmed the potential of strongly correlated material sy...
Link to full article
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