Friday, November 30, 2012

Single electron transport through site-controlled InAs quantum dots

(author unknown)



K. M. Cha, K. Shibata, and K. Hirakawa

We have grown site- and size-controlled InAs quantum dots (QDs) in shallow nanoholes prepared using atomic force microscope-assisted anodic nano-oxidation and subsequent etching, and investigated their transport properties by depositing metal nanogap electrodes on a single QD. We have observed cle ... [Appl. Phys. Lett. 101, 223115 (2012)] published Fri Nov 30, 2012.



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