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Chun-Chung Chen, Chia-Chi Chang, and Zhen Li et al.
We show that the I-V characteristics of graphene-silicon junctions can be actively tuned from rectifying to Ohmic behavior by electrostatically doping the graphene with a polymer electrolyte gate. Under zero applied gate voltage, we observe rectifying I-V characteristics, demonstrating the formati ... [Appl. Phys. Lett. 101, 223113 (2012)] published Thu Nov 29, 2012.
Link to full article
Chun-Chung Chen, Chia-Chi Chang, and Zhen Li et al.
We show that the I-V characteristics of graphene-silicon junctions can be actively tuned from rectifying to Ohmic behavior by electrostatically doping the graphene with a polymer electrolyte gate. Under zero applied gate voltage, we observe rectifying I-V characteristics, demonstrating the formati ... [Appl. Phys. Lett. 101, 223113 (2012)] published Thu Nov 29, 2012.
Link to full article
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