Crystal structure assessment of Ge-Sb-Te phase change nanowires

Vincenzo Grillo

Nanoscale , 2012, Accepted Manuscript

DOI: 10.1039/C2NR32907G, Paper

Enzo Rotunno, Laura Lazzarini, Massimo Longo, Vincenzo Grillo

Further improvement of phase change memory devices based on Ge-Sb-Te alloys imposes the reduction of the active cell dimensions to the nanoscale. We investigate the effect of nanostructuring on the...

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