Modification of electronic properties of top-gated graphene devices by ultrathin yttrium-oxide dielectric layers

Ning Wang

Nanoscale , 2012, Accepted Manuscript

DOI: 10.1039/C2NR33434H, Paper

lin Wang, Xiaolong Chen, Yang WANG, Zefei Wu, Wei Li, Yu Han, Mingwei Zhang, Yuheng He, Chao Zhu, Kwok Kwong Fung, Ning Wang

We report the structure characterization and electronic property modification of single layer graphene (SLG) field-effect transistor (FET) devices top-gated using ultrathin Y2O3 as dielectric layers. Based on the Boltzmann transport...

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