Nanosheet thickness-modulated MoS2 dielectric property evidenced by field-effect transistor performance

Seongil Im

Nanoscale , 2012, Accepted Manuscript

DOI: 10.1039/C2NR33443G, Communication

Sung-Wook Min, Hee Sung Lee, Hyoung Joon Choi, Min Kyu Park, Sunmin Ryu, Seongil Im

We report on the nanosheet-thickness effects on the performance of top-gate MoS₂ field-effect transistors (FETs), which is directly related to the MoS₂ dielectric constant. Our top-gate nanosheet FETs with 40...

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