Seongil Im
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Nanoscale , 2013, Advance Article
DOI: 10.1039/C2NR33443G, Communication
DOI: 10.1039/C2NR33443G, Communication
Sung-Wook Min, Hee Sung Lee, Hyoung Joon Choi, Min Kyu Park, Taewook Nam, Hyungjun Kim, Sunmin Ryu, Seongil Im
Our top-gate single-layered MoS2 field-effect transistors (FETs) demonstrated excellent device performances of ~170 cm2 V-1 s-1 and 90 mV dec-1 , benefiting from the dielectric screening by high-k dielectric Al2 O3 . But the benefit vanishes with double- and triple-layered MoS2 .
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Our top-gate single-layered MoS2 field-effect transistors (FETs) demonstrated excellent device performances of ~170 cm2 V-1 s-1 and 90 mV dec-1 , benefiting from the dielectric screening by high-k dielectric Al2 O3 . But the benefit vanishes with double- and triple-layered MoS2 .
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
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