Feng Pan
Link to full article
Nanoscale , 2013, Advance Article
DOI: 10.1039/C2NR32743K, Paper
DOI: 10.1039/C2NR32743K, Paper
Guangsheng Tang, Fei Zeng, Chao Chen, Hongyan Liu, Shuang Gao, Cheng Song, Yisong Lin, Guang Chen, Feng Pan
A titanium oxide nanolayer-based memory cell, fabricated by the one-step plasma oxidation of a TiN film, demonstrates complementary resistive switching behaviours.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
A titanium oxide nanolayer-based memory cell, fabricated by the one-step plasma oxidation of a TiN film, demonstrates complementary resistive switching behaviours.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
Link to full article
No comments:
Post a Comment