(author unknown)
Kilian Flöhr, Kamil Sladek, and H. Yusuf Günel et al.
Indium arsenide nanowires grown by selective-area vapor phase epitaxy are used as tips for scanning tunneling microscopy (STM). The STM tips are realized by positioning the wires manually on the corner of a double cleaved gallium arsenide wafer with sub-μm precision and contacting them lithographi ... [Appl. Phys. Lett. 101, 243101 (2012)] published Mon Dec 10, 2012.
Link to full article
Kilian Flöhr, Kamil Sladek, and H. Yusuf Günel et al.
Indium arsenide nanowires grown by selective-area vapor phase epitaxy are used as tips for scanning tunneling microscopy (STM). The STM tips are realized by positioning the wires manually on the corner of a double cleaved gallium arsenide wafer with sub-μm precision and contacting them lithographi ... [Appl. Phys. Lett. 101, 243101 (2012)] published Mon Dec 10, 2012.
Link to full article
No comments:
Post a Comment