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M. Aouassa, S. Escoubas, and A. Ronda et al.
Porous silicon (PSi) layers are used as templates to grow epitaxial planar and fully relaxed Ge pseudo-substrates. An annealing at 600 °C, dramatically changes the PSi morphology and produces compliant template layers which serve in a second step, as substrate for the epitaxy of fully relaxed SiGe ... [Appl. Phys. Lett. 101, 233105 (2012)] published Mon Dec 03, 2012.
Link to full article
M. Aouassa, S. Escoubas, and A. Ronda et al.
Porous silicon (PSi) layers are used as templates to grow epitaxial planar and fully relaxed Ge pseudo-substrates. An annealing at 600 °C, dramatically changes the PSi morphology and produces compliant template layers which serve in a second step, as substrate for the epitaxy of fully relaxed SiGe ... [Appl. Phys. Lett. 101, 233105 (2012)] published Mon Dec 03, 2012.
Link to full article
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