(author unknown)
Anya L. Grushina, Dong-Keun Ki, and Alberto F. Morpurgo
We have developed a process to fabricate suspended graphene devices with local bottom gates, and tested it by realizing electrostatically controlled pn junctions on a suspended graphene mono-layer nearly 2 μm long. Measurements as a function of gate voltage, magnetic field, bias, and temperature e ... [Appl. Phys. Lett. 102, 223102 (2013)] published Tue Jun 04, 2013.
Link to full article
Anya L. Grushina, Dong-Keun Ki, and Alberto F. Morpurgo
We have developed a process to fabricate suspended graphene devices with local bottom gates, and tested it by realizing electrostatically controlled pn junctions on a suspended graphene mono-layer nearly 2 μm long. Measurements as a function of gate voltage, magnetic field, bias, and temperature e ... [Appl. Phys. Lett. 102, 223102 (2013)] published Tue Jun 04, 2013.
Link to full article
No comments:
Post a Comment