Anodic bonded 2D semiconductors: from synthesis to device fabrication

Two-dimensional semiconductors are increasingly relevant for emergent applications and devices, notably for hybrid heterostructures with graphene. We fabricate few-layer, large-area (a few tens of microns across) samples of the III–VI semiconductors GaS, GaSe and InSe using the anodic bonding method and characterize them by simultaneous use of optical microscopy, atomic force microscopy and Raman spectroscopy. Two-terminal devices with a gate are constructed to show the feasibility of applications based on these.

Zhesheng Chen, Karim Gacem, Mohamed Boukhicha, Johan Biscaras and Abhay Shukla

Click for full article