Wide-bandwidth charge sensitivity with a radio-frequency field-effect transistor

Katsuhiko Nishiguchi, Hiroshi Yamaguchi, and Akira Fujiwara et al.

We demonstrate high-speed charge detection at room temperature with single-electron resolution by using a radio-frequency field-effect transistor (RF-FET). The RF-FET combines a nanometer-scale silicon FET with an impedance-matching circuit composed of an inductor and capacitor. Driving the RF-FET ... [Appl. Phys. Lett. 103, 143102 (2013)] published Mon Sep 30, 2013.



Click for full article