Charge carrier generation, relaxation, and recombination in polytypic GaAs nanowires studied by photoluminescence excitation spectroscopy

P. Corfdir, B. Van Hattem, and E. Uccelli et al.

We report results of a study of polytypic GaAs nanowires using low-temperature photoluminescence excitation spectroscopy. The nanowire ensemble shows a strong absorption at 1.517 eV, as a result of resonant generation of heavy-hole excitons in the zinc-blende segments of the nanowires. Excitons th ... [Appl. Phys. Lett. 103, 133109 (2013)] published Thu Sep 26, 2013.



Click for full article