Resistance profiles along as-grown GaAs nanowires were measured with a multi-tip scanning tunneling microscope used as a nanoprober. The nanowires were grown in the vapor-liquid-solid growth mode in a two-temperature-step mode and doped with Zn. Using a transport model, the resistance profile was ... [Appl. Phys. Lett. 103, 143104 (2013)] published Mon Sep 30, 2013.
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