Nanoscale , 2014, 6,3127-3137
DOI: 10.1039/C3NR05828J, Paper
DOI: 10.1039/C3NR05828J, Paper
H. Li, J. M. Shao, H. B. Zhang, G. W. Yang
The conductance G as a function of the incident energy E (panel (a)) and the potential strength V (panel (b)) of a single potential barrier structure in topological insulator (TI) ultrathin films (UTFs) is plotted.
The content of this RSS Feed (c) The Royal Society of Chemistry
The conductance G as a function of the incident energy E (panel (a)) and the potential strength V (panel (b)) of a single potential barrier structure in topological insulator (TI) ultrathin films (UTFs) is plotted.
The content of this RSS Feed (c) The Royal Society of Chemistry
Click for full article
No comments:
Post a Comment