Nanoscale , 2014, 6,3006-3021
DOI: 10.1039/C3NR06692D, Feature Article
DOI: 10.1039/C3NR06692D, Feature Article
Kimberly A. Dick, Philippe Caroff
The progress towards developing gold-free bottom-up synthesis techniques for III-V semiconductor nanowires is reviewed. Three main categories of nanowire synthesis are discussed: selective-area epitaxy, self-seeding and foreign metal seeding, with main focus on the metal-seeded techniques.
The content of this RSS Feed (c) The Royal Society of Chemistry
The progress towards developing gold-free bottom-up synthesis techniques for III-V semiconductor nanowires is reviewed. Three main categories of nanowire synthesis are discussed: selective-area epitaxy, self-seeding and foreign metal seeding, with main focus on the metal-seeded techniques.
The content of this RSS Feed (c) The Royal Society of Chemistry
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