Nanoscale , 2014, Advance Article
DOI: 10.1039/C4NR02164A, Paper
DOI: 10.1039/C4NR02164A, Paper
Tu Hong, Bhim Chamlagain, Wenzhi Lin, Hsun-Jen Chuang, Minghu Pan, Zhixian Zhou, Ya-Qiong Xu
Electrical and optoelectronic properties of few-layer black phosphorus field-effect transistors are investigated through spatial-, polarization-, gate-, and bias-dependent photocurrent measurements.
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Electrical and optoelectronic properties of few-layer black phosphorus field-effect transistors are investigated through spatial-, polarization-, gate-, and bias-dependent photocurrent measurements.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
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