Thursday, March 26, 2015

Thickness-dependent mobility in two-dimensional MoS2 transistors




Nanoscale , 2015, 7,6255-6260

DOI: 10.1039/C4NR06331G, Paper

Dominik Lembke, Adrien Allain, Andras Kis

The intrinsic mobility of two-dimensional (2D) semiconductors is easily masked by surface absorbates. We report here that after carful annealing, the room-temperature mobility of field-effect transistors (FETs) based on monolayer MoS2 is significantly higher than that of FETs based on two or three layers.

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