Nanoscale, 2016, Advance Article
DOI: 10.1039/C5NR04978D, Review Article
DOI: 10.1039/C5NR04978D, Review Article
Brittany L. Oliva-Chatelain, Thomas M. Ticich, Andrew R. Barron
The methods and characterization of dopants into silicon nanocrystals and quantum dots is reviewed, with emphasis on the location of the doping element: within the crystal lattice (c-doping), on the surface (s-doping), or within the surrounding matrix (m-doping).
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The content of this RSS Feed (c) The Royal Society of Chemistry
The methods and characterization of dopants into silicon nanocrystals and quantum dots is reviewed, with emphasis on the location of the doping element: within the crystal lattice (c-doping), on the surface (s-doping), or within the surrounding matrix (m-doping).
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
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