Nanoscale, 2016, Accepted Manuscript
DOI: 10.1039/C5NR07336G, Paper
DOI: 10.1039/C5NR07336G, Paper
Jiapei Shu, Gongtao Wu, Yao Guo, Bo Liu, Xianlong Wei, Qing Chen
We investigate the hysteresis and gate voltage stress effect in MoS2 field effect transistors (FETs). We observe that both the suspended and the SiO2-supported FETs have large hysteresis in their...
The content of this RSS Feed (c) The Royal Society of Chemistry
We investigate the hysteresis and gate voltage stress effect in MoS2 field effect transistors (FETs). We observe that both the suspended and the SiO2-supported FETs have large hysteresis in their...
The content of this RSS Feed (c) The Royal Society of Chemistry
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