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G. Stracke, A. Glacki, and T. Nowozin et al.
Coherent In0.25Ga0.75As quantum dots (QDs) are realized on GaP(001) substrates by metalorganic vapor phase epitaxy in the Stranski-Krastanow mode utilizing a thin GaAs interlayer prior to In0.25Ga0.75As deposition. Luminescence is observed between 2.0 eV and 1.83 eV, depending on the thickness of ... [Appl. Phys. Lett. 101, 223110 (2012)] published Tue Nov 27, 2012.
Link to full article
G. Stracke, A. Glacki, and T. Nowozin et al.
Coherent In0.25Ga0.75As quantum dots (QDs) are realized on GaP(001) substrates by metalorganic vapor phase epitaxy in the Stranski-Krastanow mode utilizing a thin GaAs interlayer prior to In0.25Ga0.75As deposition. Luminescence is observed between 2.0 eV and 1.83 eV, depending on the thickness of ... [Appl. Phys. Lett. 101, 223110 (2012)] published Tue Nov 27, 2012.
Link to full article
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