Tuesday, November 27, 2012

Growth of In0.25Ga0.75As quantum dots on GaP utilizing a GaAs interlayer

(author unknown)



G. Stracke, A. Glacki, and T. Nowozin et al.

Coherent In0.25Ga0.75As quantum dots (QDs) are realized on GaP(001) substrates by metalorganic vapor phase epitaxy in the Stranski-Krastanow mode utilizing a thin GaAs interlayer prior to In0.25Ga0.75As deposition. Luminescence is observed between 2.0 eV and 1.83 eV, depending on the thickness of ... [Appl. Phys. Lett. 101, 223110 (2012)] published Tue Nov 27, 2012.



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