Saturday, December 22, 2012

Modification of electronic properties of top-gated graphene devices by ultrathin yttrium-oxide dielectric layers

Ning Wang






Nanoscale , 2013, Advance Article

DOI: 10.1039/C2NR33434H, Paper

Lin Wang, Xiaolong Chen, Yang Wang, Zefei Wu, Wei Li, Yu Han, Mingwei Zhang, Yuheng He, Chao Zhu, Kwok Kwong Fung, Ning Wang

Top-gated graphene devices using Y2 O3 as dielectric layers show excellent electrical performance in both DC transport and AC capacitance measurements, which also allow us to investigate the origins of the disorder introduced by Y2 O3 layers.

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