Friday, March 29, 2013

Characterization and suppression of low-frequency noise in Si/SiGe quantum point contacts and quantum dots

(author unknown)



K. Takeda, T. Obata, and Y. Fukuoka et al.

We report on the effects of a global top gate on low-frequency noise in Schottky gate-defined quantum point contacts (QPCs) and quantum dots (QDs) in a modulation-doped Si/SiGe heterostructure. For a relatively large top gate voltage, the QPC current shows frequent switching with 1/f2 Lorentzian t ... [Appl. Phys. Lett. 102, 123113 (2013)] published Fri Mar 29, 2013.



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