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Min Xie, Dongsheng Li, and Le Chen et al.
Electrically activated doping of boron (B) atoms into the Si-nanocrystals (Si-NCs) embedded silicon oxide film is achieved by co-sputtering technique following with the annealing treatment. The evolution of the size, the shape, and the density of Si-NCs with the doping of B atoms is investigated. ... [Appl. Phys. Lett. 102, 123108 (2013)] published Thu Mar 28, 2013.
Link to full article
Min Xie, Dongsheng Li, and Le Chen et al.
Electrically activated doping of boron (B) atoms into the Si-nanocrystals (Si-NCs) embedded silicon oxide film is achieved by co-sputtering technique following with the annealing treatment. The evolution of the size, the shape, and the density of Si-NCs with the doping of B atoms is investigated. ... [Appl. Phys. Lett. 102, 123108 (2013)] published Thu Mar 28, 2013.
Link to full article
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