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N. R. Pradhan, D. Rhodes, and Q. Zhang et al.
By fabricating and characterizing multi-layered MoS2-based field-effect transistors in a four terminal configuration, we demonstrate that the two terminal-configurations tend to underestimate the carrier mobility μ due to the Schottky barriers at the contacts. For a back-gated two-terminal configu ... [Appl. Phys. Lett. 102, 123105 (2013)] published Wed Mar 27, 2013.
Link to full article
N. R. Pradhan, D. Rhodes, and Q. Zhang et al.
By fabricating and characterizing multi-layered MoS2-based field-effect transistors in a four terminal configuration, we demonstrate that the two terminal-configurations tend to underestimate the carrier mobility μ due to the Schottky barriers at the contacts. For a back-gated two-terminal configu ... [Appl. Phys. Lett. 102, 123105 (2013)] published Wed Mar 27, 2013.
Link to full article
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