Wednesday, March 27, 2013

Intrinsic carrier mobility of multi-layered MoS2 field-effect transistors on SiO2

(author unknown)



N. R. Pradhan, D. Rhodes, and Q. Zhang et al.

By fabricating and characterizing multi-layered MoS2-based field-effect transistors in a four terminal configuration, we demonstrate that the two terminal-configurations tend to underestimate the carrier mobility μ due to the Schottky barriers at the contacts. For a back-gated two-terminal configu ... [Appl. Phys. Lett. 102, 123105 (2013)] published Wed Mar 27, 2013.



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