Thursday, July 11, 2013

Atomistic modeling of metallic nanowires in silicon

Nanoscale , 2013, Accepted Manuscript

DOI: 10.1039/C3NR01796F, Paper

Hoon Ryu, Sunhee Lee, Bent Weber, Suddhasatta Mahapatra, Lloyd Hollenberg, Michelle Simmons, Gerhard Klimeck

Scanning tunneling microscope (STM) lithography has recently demonstrated the ultimate in device scaling limit with buried, conducting nanowires just a few atoms wide and the realization of single atom transistors,...

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