Monday, July 08, 2013

Effect of Doping Density on the Charge Rearrangement and Interface Dipole at the Molecule–Silicon Interface

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The Journal of Physical Chemistry C

DOI: 10.1021/jp403177e




Omer Yaffe, Sidharam Pujari, Ofer Sinai, Ayelet Vilan, Han Zuilhof, Antoine Kahn, Leeor Kronik, Hagai Cohen and David Cahen

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