Thursday, July 11, 2013

Electronic band structure of wurtzite GaP nanowires via temperature dependent resonance Raman spectroscopy

Jaya Kumar Panda, Anushree Roy, and Mauro Gemmi et al.

Resonance Raman measurements are carried out on defect-free wurtzite GaP nanowires over the excitation energy range between 2.19 and 2.71 eV. Resonances of the E1(LO) and A1(LO) modes demonstrate the existence of energy states with Γ9hh and Γ7V (Γ7C) symmetries of the valence (conduction) band and ... [Appl. Phys. Lett. 103, 023108 (2013)] published Thu Jul 11, 2013.



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