Origin of radiation tolerance in 3C-SiC with nanolayered planar defects

Manabu Ishimaru, Yanwen Zhang, and Steven Shannon et al.

We have recently found that the radiation tolerance of SiC is highly enhanced by introducing nanolayers of stacking faults and twins [Y. Zhang et al., Phys. Chem. Chem. Phys. 14, 13429 (2012)]. To reveal the origin of this radiation resistance, we used in situ transmission electron microscopy to e ... [Appl. Phys. Lett. 103, 033104 (2013)] published Mon Jul 15, 2013.



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