We report the work function modulation of bilayer MoS2 nanoflake induced by backgate electric filed. The Fermi level of bilayer MoS2 increased by 115 meV with the backgate bias larger than the threshold voltage. Carrier doping induced by the electric filed was responsible for the variation of work ... [Appl. Phys. Lett. 103, 033122 (2013)] published Fri Jul 19, 2013.
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