Wednesday, October 09, 2013

Current transport mechanism at metal-semiconductor nanoscale interfaces based on ultrahigh density arrays of p-type NiO nano-pillars




Nanoscale , 2013, Advance Article

DOI: 10.1039/C3NR03803C, Paper

Suman Nandy, Goncalo Goncalves, Joana Vaz Pinto, Tito Busani, Vitor Figueiredo, Luis Pereira, Rodrigo Ferrao Paiva Martins, Elvira Fortunato

The present work focuses on a qualitative analysis of localised I-V characteristics based on the nanostructure morphology of highly dense arrays of p-type NiO nano-pillars (NiO-NPs).

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