We present measurements of the electron spin lifetime (T1) of a single Sb donor in Si. For a magnetic field (B) oriented along the [100] Si crystal direction and low temperature (T) such that kT≪gμB, we find T1−1 = KB5, where K = 1.7×10−3 Hz T−5. The T1−1∝B5 dependence is expected for donor electr ... [Appl. Phys. Lett. 103, 143115 (2013)] published Wed Oct 02, 2013.
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