Mapping electrostatic profiles across axial p-n junctions in Si nanowires using off-axis electron holography

Zhaofeng Gan, Daniel E. Perea, and Jinkyoung Yoo et al.

Si nanowires (NWs) with axial p-n junctions were grown by the vapor-liquid-solid method. Transmission electron microscopy and electron holography were used to characterize the microstructure and electrostatic properties. Measurement of the potential profile showed the presence of a p-n junction wi ... [Appl. Phys. Lett. 103, 153108 (2013)] published Fri Oct 11, 2013.



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