Thursday, October 17, 2013

Random Telegraph Noise and Resistance Switching Analysis of Oxide based Resistive Memory

Nanoscale , 2013, Accepted Manuscript

DOI: 10.1039/C3NR05016E, Paper

Wei Lu, Yuchao Yang, Shin-Hyun Choi

Resistive random access memory (RRAM) devices (e.g. "memristors") are widely believed to be a promising candidate for future memory and logic applications. Although excellent performance has been reported, the nature...

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