Friday, October 11, 2013

Raoult’s Formalism in Understanding Low-Temperature Growth of GaN Nanowires Using Binary Precursor

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The Journal of Physical Chemistry C

DOI: 10.1021/jp405966k




Kishore K. Madapu, S. Dhara, S. Amirthapandian, S. Polaki and A. K. Tyagi

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