Tuesday, October 01, 2013

Strain-induced self-assembly of Ge nanodashes, nanodumbbells, and dot chains on Si(001)

J. J. Zhang and O. G. Schmidt

We investigate the growth of self-assembled Ge nanostructures on top of embedded Ge nanowires on Si(001) substrates. Ge nanostructures, such as nanodashes, nanodumbbells, and dot chains are observed simply by tuning the growth temperature and thickness of the Si spacer between the Ge layers. The s ... [Appl. Phys. Lett. 103, 143112 (2013)] published Tue Oct 01, 2013.



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