Monday, February 24, 2014

Angular dependence of the magnetoresistance effect in a silicon based p-n junction device




Nanoscale , 2014, Advance Article

DOI: 10.1039/C3NR04077A, Paper

Tao Wang, Mingsu Si, Dezheng Yang, Zhong Shi, Fangcong Wang, Zhaolong Yang, Shiming Zhou, Desheng Xue

Anisotropic MR effect is seen in a non-magnetic p-n junction due to the space charge region being modulated by an external magnetic field.

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