Nanoscale , 2014, Advance Article
DOI: 10.1039/C3NR05828J, Paper
DOI: 10.1039/C3NR05828J, Paper
H. Li, J. M. Shao, H. B. Zhang, G. W. Yang
The conductance G as a function of the incident energy E (panel (a)) and the potential strength V (panel (b)) of a single potential barrier structure in topological insulator (TI) ultrathin films (UTFs) is plotted.
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The conductance G as a function of the incident energy E (panel (a)) and the potential strength V (panel (b)) of a single potential barrier structure in topological insulator (TI) ultrathin films (UTFs) is plotted.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
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