Thursday, February 13, 2014

MoS2/MX2 heterobilayers: bandgap engineering via tensile strain or external electrical field




Nanoscale , 2014, 6,2879-2886

DOI: 10.1039/C3NR06072A, Paper

Ning Lu, Hongyan Guo, Lei Li, Jun Dai, Lu Wang, Wai-Ning Mei, Xiaojun Wu, Xiao Cheng Zeng

We have performed a comprehensive first-principles study of the electronic and magnetic properties of two-dimensional (2D) transition-metal dichalcogenide (TMD) heterobilayers MX2 /MoS2 (M = Mo, Cr, W, Fe, V; X = S, Se).

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