Nanoscale , 2014, Advance Article
DOI: 10.1039/C4NR00159A, Paper
DOI: 10.1039/C4NR00159A, Paper
Sanjeev K. Gupta, Haiying He, Douglas Banyai, Mingsu Si, Ravindra Pandey, Shashi P. Karna
Unique electronic and transport properties were predicted for Si-doped BN monolayer consisting of a significant enhancement of current at the dopant site, diode-like asymmetric current-voltage response, and negative differential resistance.
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Unique electronic and transport properties were predicted for Si-doped BN monolayer consisting of a significant enhancement of current at the dopant site, diode-like asymmetric current-voltage response, and negative differential resistance.
To cite this article before page numbers are assigned, use the DOI form of citation above.
The content of this RSS Feed (c) The Royal Society of Chemistry
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