Non-exponential resistive switching in Ag2S memristors: a key to nanometer-scale non-volatile memory devices

Nanoscale , 2015, 7,4394-4399

DOI: 10.1039/C5NR00399G, Communication

Agnes Gubicza, Miklos Csontos, Andras Halbritter, Gyorgy Mihaly

The non-exponential dynamics of resistive switchings in Ag₂ S memristive nanojunctions provides an ideal basis for non-volatile memory applications.

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