Nanoscale , 2015, 7,4522-4528
DOI: 10.1039/C4NR07197B, Paper
DOI: 10.1039/C4NR07197B, Paper
Dandan Wang, Lei Liu, Wei Chen, Xiaobo Chen, Han Huang, Jun He, Yuan-Ping Feng, A. T. S. Wee, D. Z. Shen
A vacancy assisted Si-C bond flipping model, together with an energetic-beam controlled growth method, has been proposed for graphene growth on SiC.
The content of this RSS Feed (c) The Royal Society of Chemistry
A vacancy assisted Si-C bond flipping model, together with an energetic-beam controlled growth method, has been proposed for graphene growth on SiC.
The content of this RSS Feed (c) The Royal Society of Chemistry
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