Nanoscale , 2015, 7,6340-6347
DOI: 10.1039/C5NR01361E, Paper
DOI: 10.1039/C5NR01361E, Paper
Sijung Yoo, Taeyong Eom, Taehong Gwon, Cheol Seong Hwang
The mechanism of bipolar resistive switching (BRS) of amorphous Ge2 Sb2 Te5 (GST) thin films sandwiched between inert electrodes (Ti and Pt) was examined.
The content of this RSS Feed (c) The Royal Society of Chemistry
The mechanism of bipolar resistive switching (BRS) of amorphous Ge2 Sb2 Te5 (GST) thin films sandwiched between inert electrodes (Ti and Pt) was examined.
The content of this RSS Feed (c) The Royal Society of Chemistry
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